Persistent spectral-hole burning in the wide-gap semiconductor SiC doped with vanadium
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference5 articles.
1. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
2. Semi‐insulating 6H–SiC grown by physical vapor transport
3. Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide
4. Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium
5. Photon-gated hole burning: a new mechanism using two-step photoionization
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