Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference18 articles.
1. Third-generation infrared photodetector arrays
2. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
3. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
4. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
5. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
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1. InAs based pBin MWIR photodetectors grown by liquid phase epitaxy: Design, fabrication and characterization;Journal of Crystal Growth;2023-09
2. Design and passivation of short-/mid-wavelength dual-color infrared detector photodiodes based on InAs/GaSb type II superlattice;Applied Physics A;2023-03-30
3. Quasi-three-dimensional nanopost array integrated Type-II superlattice photodetectors for infrared multispectral filtering;Materials Today Nano;2022-06
4. Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations;Sensors;2022-01-16
5. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15
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