5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer-Reference-Cited by-同舟云学术

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

Published:2015-07-10 Issue:14 Volume:23 Page:18686
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Fu Xin,Cheng Jianxin,Huang Qiangsheng,Hu Yingtao,Xie Weiqiang,Tassaert Martijn,Verbist Jochem,Ma Keqi,Zhang Jianhao,Chen Kaixuan,Zhang Chenzhao,Shi Yaocheng,Bauwelinck Johan,Roelkens Gunther,Liu Liu,He Sailing

Funder

the National High Technology Research and Development Program (863) of China

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference14 articles.

1. Silicon Mod-MUX-Ring transmitter with 4 channels at 40 Gb/s

2. Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacing

3. Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

4. Monolithically integrated eight-channel WDM modulator with narrow channel spacing and high throughput

5. InP-Based Photonic Multiwavelength Transmitter With DBR Laser Array

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