Affiliation:
1. Samsung Advanced Institute of Technology
2. Samsung Semiconductor R&D Center
Abstract
A III/V-on-Bulk-Si DFB laser with a long phase shift section optimized for single-mode stability is presented. The optimized phase shift allows stable single-mode operations up to 20 times a threshold current. This mode stability is achieved by a gain difference between fundamental and higher modes maximized by sub-wavelength-scale tuning of the phase shift section. In SMSR-based yield analyses, the long-phase-shifted DFB laser showed superior performance compared to the conventional λ/4-phase-shifted ones.
Subject
Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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