Affiliation:
1. Ori-chip optoelectronics technology LTD
2. Zhejiang University
3. School of Physics & CRANN and CONNECT
Abstract
We present an 8-µm-wide 800-µm-long high-power, single-mode and low RIN DFB laser using a dual-waveguide structure. The introduced passive lower waveguide has weakenes the lateral optical confinement for the ridge waveguide, and thus reduces losses caused by the p-doped layers and maintains single mode stability of the laser. The fabricated laser exhibited an output power higher than 170 mW and a relative intensity noise (RIN) below −157 dB/Hz along with a side-mode suppression-ratio (SMSR) over 55 dB. The temperature tuning from −10°C to 60°C allows an 8.6 nm wavelength tunability with a variation coefficient of 0.12 nm/K. The relaxation oscillation frequency is around 8 GHz, and the linewidth is about 250 kHz at 100 mW output power for the fabricated laser. The characteristics of the proposed high-power laser, including high slope efficiency, single mode stability and low noise, make it a suitable candidate for optical communication.
Funder
Opened Fund of the State Key Laboratory of Integrated Optoelectronics
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
19 articles.
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