Abstract
Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using CsBi3I10/phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at −2V bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that CsBi3I10/PCBM bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China