Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference11 articles.
1. Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells
2. Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2multilayer films
3. Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals
4. Slow decay dynamics of visible luminescence in porous silicon: Hopping of carriers confined on a shell region in nanometer-size Si crystallites
5. Effects of boron doping on the structural and optical properties of silicon nanocrystals in a silicon dioxide matrix
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