Enhancement of passively Q-switched performance at 134 μm with a class of Nd:GdxY_1-xVO_4 crystals
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. Highly efficient Nd:YVO4diode‐laser end‐pumped laser
2. A laser diode array pumped, Nd: YVO4/KTP, composite material microchip laser
3. A comparative study of diode pumped microchip laser materials: Nd-doped YVO4, YOS, SFAP and SVAP
4. Continuous-wave operation at 1386 nm in a diode-end-pumped Nd:YVO4 laser
5. Pulse shape symmetry and pulse width reduction in diode-pumped doubly Q-switched Nd:YVO4/KTP green laser with AO and GaAs
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1. Tungsten disulfide saturable absorber for passively Q-Switched YVO4/Nd:YVO4/YVO4 laser at 1342.2 nm;Optical Materials;2019-06
2. Passive mode-locking characteristics from the Nd:Gd0.19Y0.81VO4 laser at 1.34 µm;Optics & Laser Technology;2016-08
3. Mode-locking characteristics comparison at 1.34μm between Nd:GdxY1−xVO4series crystals;Laser Physics;2016-03-08
4. Growth, thermal and laser properties of Yb:YxLu1−xVO4 mixed crystal;Materials Chemistry and Physics;2015-06
5. Diode-pumped passively mode-locked composite crystal Nd:Lu0.15Y0.85VO4laser at 1342.2 nm;Laser Physics;2015-03-10
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