Author:
MacDowell A.A.,Shen Z.,Fujii K.,Bjorkholm J.E.,Freeman R.R.,Fetter L.,Taylor D.W.,Tennant D.M.,Eichner L.,Waskiewicz W.K.,White D.L.,Windt D.L.,Wood O.R.,Haney S.,Jewell T.
Abstract
A 1X Offner Ring Field Extreme Ultraviolet lithography machine has been fabricated for use with 13.4nm radiation. Initial imaging results printed 75nm features but with low modulation. This initial work indicates that the optics suffer from a range of problems that we are trying to identify. These problems are typical of what a realistic EUV lithography machine will face.
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1 articles.
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