Design and Characteristics of Optimized Quaternary Layer Between Last Quantum Barrier and Electron Blocking Layer in Deep Ultraviolet Light-Emitting Diode

Abstract

In this research, we sandwich the aluminum indium gallium nitride (AlInGaN) layer between the final quantum barrier (LQB) and electron blocking layer (EBL) to increase the optoelectronic properties of AlGaN-based light-emitting diodes (LEDs).