GaN-based mid-power flip-chip light-emitting diode with high −3 dB bandwidth for visible light communications-Reference-Cited by-同舟云学术

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GaN-based mid-power flip-chip light-emitting diode with high −3 dB bandwidth for visible light communications

Published:2018-04-03 Issue:11 Volume:57 Page:2773
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Zhou Zheng,Yan Bing,Ma Xuejin,Teng Dongdong,Liu Lilin,Wang Gang

Funder

Government of Guangdong Province

“863” Program of China

Guangzhou Technical Plan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference33 articles.

1. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

2. Solid-state lighting: ‘The case’ 10 years after and future prospects

3. A 3-Gb/s Single-LED OFDM-Based Wireless VLC Link Using a Gallium Nitride $\mu{\rm LED}$

4. Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

5. Line-of-Sight Visible Light Communications With InGaN-Based Resonant Cavity LEDs

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1. Small signal analysis of the modulation bandwidth of light-emitting diodes for visible light communication;Optics & Laser Technology;2022-08

2. Parallel micro-LED arrays with a high modulation bandwidth for a visible light communication;Optics Letters;2022-07-13

3. Numerical Investigation of Light Extraction Efficiency of GaN-based Vertical Blue Micron-Scale Light-Emitting Diode Structures;Journal of Nanoscience and Nanotechnology;2021-03-01

4. Influence of multiple quantum well number on modulation bandwidth of InGaN/GaN light-emitting diodes;Journal of Optics;2021-01-04

5. Cascade GaN-based blue micro-light-emitting diodes for dual function of illumination and visible light communication;Journal of Physics D: Applied Physics;2020-06-15

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