Tunable type II intracavity difference frequency generation at 54 μm in a two chip vertical external cavity surface emitting laser
Author:
Funder
National Science Foundation (NSF)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference14 articles.
1. Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
2. 589-nm single-frequency VECSEL for sodium guidestar applications
3. High power CW red VECSEL with linearly polarized TEM_00 output beam
4. Semiconductor disk laser at 2.05 μm wavelength with <100 kHz linewidth at 1 W output power
5. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si
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