Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate-Reference-Cited by-同舟云学术

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Published:2019-05-22 Issue:6 Volume:7 Page:B24
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Armstrong Andrew M.^ORCID,Klein Brianna A.,Allerman Andrew A.,Baca Albert G.,Crawford Mary H.,Podkaminer Jacob,Perez Carlos R.,Siegal Michael P.,Douglas Erica A.,Abate Vincent M.,Leonard Francois^ORCID

Funder

Sandia National Laboratories

Defense Advanced Research Projects Agency

National Technology and Engineering Solutions of Sandia

U.S. Department of Energy’s National Nuclear Security Administration

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Front Matter: Volume 7320

2. Operational Analysis of a Quantum Dot Optically Gated Field-Effect Transistor as a Single-Photon Detector

3. Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

4. Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

5. Detection of single photons using a field-effect transistor gated by a layer of quantum dots

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