Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes

Published:2014-05-23 Issue:S4 Volume:22 Page:A1040
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Min Jung-Hong,Son Myungwoo,Bae Si-Young,Lee Jun-Yeob,Yun Joosun,Maeng Min-Jae,Kwon Dae-Gyeon,Park Yongsup,Shim Jong-In,Ham Moon-Ho,Lee Dong-Seon

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference42 articles.

1. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

2. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

3. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

4. Auger recombination rates in nitrides from first principles

5. First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

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1. Sign reversal of visible to UV photocurrent in core–shell n-InGaN/p-GaN nanowire photodetectors;Journal of Applied Physics;2024-07-15

2. Advanced Graphene/Metal-Mesh Hybrid Transparent Electrodes via Ultraviolet (UV)–Ozone Treatment for UV-Range Optoelectronic Devices;ACS Applied Electronic Materials;2024-05-21

3. A patterning technology of transfer-free graphene for transparent electrodes of near-ultraviolet light-emitting diodes;Journal of Materials Chemistry C;2024

4. AlGaN基深紫外LED新型透明电极芯片及阵列器件消毒效率研究;Laser & Optoelectronics Progress;2024

5. Graphene as a Transparent Conductive Electrode in GaN-Based LEDs;Materials;2022-03-16

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