Affiliation:
1. Henan University of Engineering
2. Huaibei Yeolight Technology Co., Ltd.
3. Henan University
4. Chinese Academy of Sciences
Abstract
In colloid quantum dot light-emitting diodes (QLEDs), the control of interface states between ZnO and quantum dots (QDs) plays a vital role. We present a straightforward and efficient method using a negative corona discharge to modify the QD film, creating a dipole moment at the interface of QDs and magnesium-doped ZnO (ZnMgO) for balanced charge carrier distribution within the QDs. This process boosts external quantum efficiencies in red, green, and blue QLEDs to 17.71%, 14.53%, and 9.04% respectively. Notably, optimized devices exhibit significant enhancements, especially at lower brightness levels (1000 to 10,000 cd·m−2), vital for applications in mobile displays, TV screens, and indoor lighting.
Funder
Key Technologies Research and Development Program
National Natural Science Foundation of China
Scientific Research Foundation of the Higher Education Institutions of Henan Province
University Level Project of the Innovation Training Program for College Students in Henan Province China
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献