Laser dynamics: probing microscopic processes in InGaN light emitters-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Laser dynamics: probing microscopic processes in InGaN light emitters

Published:2014-11-11 Issue:12 Volume:31 Page:3001
ISSN:0740-3224
Container-title:Journal of the Optical Society of America B
language:en
Short-container-title:J. Opt. Soc. Am. B

Author:

Sarkissian Raymond,O’Brien John D.,Dapkus P. Daniel

Funder

U.S. Department of Energy (DOE)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics

Reference23 articles.

1. Efficiency droop in nitride-based light-emitting diodes

2. Auger recombination in InGaN measured by photoluminescence

3. Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

4. Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

5. Photon quenching in InGaN quantum well light emitting devices

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP