Graphene-enhanced lateral photovoltaic effect observed in the Ag nanoparticle-covered graphene/n-type silicon-Reference-Cited by-同舟云学术

Graphene-enhanced lateral photovoltaic effect observed in the Ag nanoparticle-covered graphene/n-type silicon

Published:2024-05-28 Issue:11 Volume:49 Page:3126
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Liu Shuai¹^ORCID,Ren Feiyu²,Dong Xinyuan,Zheng Diyuan,Niu Yiru,Jiao Lu¹,Tu Weiwei¹,Gan Zhikai³,Wang Hui

Affiliation:

1. Tianjin University of Technology and Education

2. University of Shanghai for Science and Technology

3. Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Abstract

Graphene is a kind of two-dimensional material with a single-layer carbon structure and has been investigated in many high-performance photodetectors. The lateral photovoltaic effect (LPE) is widely used in the position-sensitive detectors (PSDs) owing to its linear response of photovoltage to the light position. In this Letter, a type of graphene-enhanced LPE is observed in the Ag nanoparticle-covered graphene/n-type Si. The LPE sensitivity can reach 97.3 mV/mm, much higher than the sensitivity of 1.3 mV/mm in the control sample of Ag/Si and 5.2 mV/mm of graphene/Si. Based on the photocarriers’ diffusion mechanism, tailoring a photocarrier transfer at the interface of a heterojunction plays a key role for the enhancement. These findings exhibit great application potential of graphene in the field of PSDs and offer an effective method for the optimization of LPE devices.

Funder

National Natural Science Foundation of China

Publisher

Optica Publishing Group

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