(Hg,Cd)Te Photodiode Laser Receivers for the 1–3-μ Spectral Region
Author:
Publisher
The Optical Society
Reference4 articles.
1. Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p Calculations
2. Energy Gap in Hg1−xCdxTe by Optical Absorption
3. Electron Mobility in Hg1−xCdxTe
4. TYPE CONVERSION ANDn‐pJUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENT
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1. Large area CdxHg1−xTe photodiode with picosecond response time τRC;Low Temperature Physics;2022-02
2. Pulsars;Excursions in Astronomical Optics;1996
3. Semiconductor Devices and Materials for Optical Communication at 2-4 μM Wavelengths Range;MRS Proceedings;1990
4. Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes;Infrared Physics;1988-05
5. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
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