Affiliation:
1. Beijing Institute of Technology
2. Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology
3. Yangtze Delta Region Academy of Beijing Institute of Technology
Abstract
Although the performance of quantum-dot-based light emitting diodes (QLEDs) has been significantly enhanced over the past years, conventional full-color QLED displays still rely on the side-by-side pattern techniques of red (R)/green (G)/blue (B) quantum dots (QDs). Such lateral integration of multi-color pixels imposes technological difficulty in the development of high-resolution displays due to limited pixel density and fill factors. Herein, we demonstrate the development of full-color QLEDs with bias-tunable emission spectra by engineering mixed R/G/B QDs as light emitting layers. In Commission Internationale de l’Eclairage (CIE) chromaticity coordinates, QLEDs with bias-tunable color exhibit wide color variation ranging from red (0.649, 0.330) to green (0.283, 0.305) to blue (0.255, 0.264) upon increasing voltages and can be tuned to emit white light (0.316, 0.325). More importantly, the fabricated multi-color QLEDs show high luminance approaching
10
3
cd
m
−
2
and superior external quantum efficiency of 13.3%. Benefitting from the wide spectral tunability and light emitting efficiency, we believe the proposed multi-color QLEDs have great application prospects for both displays and lighting.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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