Reconfigurable hybrid silicon waveguide Bragg filter using ultralow-loss phase-change material

Author:

Zhou Ting1,Gao Yixiao1,Wang Guoxiang1,Chen Yimin1ORCID,Gu Chenjie1,Bai Gongxun2,Shi Yaocheng3ORCID,Shen Xiang1

Affiliation:

1. Ningbo University

2. China Jiliang University

3. Zhejiang University

Abstract

Reconfigurable silicon photonic devices attract much research attention, and hybrid integration with tunable phase-change materials (PCMs) exhibiting large refractive index contrast between amorphous (Am) and crystalline (Cr) states is a promising way to achieve this goal. Here, we propose and numerically investigate a S b 2 S e 3 -Si hybrid waveguide Bragg filter operating in the telecom C-band on the silicon-on-insulator (SOI) platform. The proposed device consists of a Bragg grating (BG) with a thin top layer of ultralow-loss S b 2 S e 3 PCM interacting with evanescent field of the silicon waveguide mode. By harnessing the ultralow-loss and reversible index change of S b 2 S e 3 film, the spectral response of the hybrid BGs could be dynamically tuned. We also theoretically investigate the reversible phase transitions between Am and Cr states of S b 2 S e 3 film that could be attained by applying voltage pulses on the indium-tin-oxide (ITO) strip heater covered on S b 2 S e 3 film. Thermal simulations show that a 2 V (4.5 V) pulse with a duration of 400 ns (55 ns) applied to electric contacts would produce crystallization (or amorphization). The proposed structure may find great potential for on-chip phase tunable devices on a silicon platform.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Natural Science Foundation of Ningbo

Open Foundation of Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province

The K. C. Wong Magna Fund of Ningbo University

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

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