Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

Author:

Kanno Erina1,Takeda Koji1ORCID,Fujii Takuro1ORCID,Kakitsuka Takaaki12,Matsuo Shinji1

Affiliation:

1. NTT Corporation

2. Waseda University

Abstract

We developed short-active-length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip-to-chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-µm laser was 51 µA, which compares favorably to our previous 10-µm DBR lasers with a threshold current of 170 µA.

Publisher

Optica Publishing Group

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