High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Author:
Funder
National Research Foundation Singapore
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference51 articles.
1. Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping
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3. Germanium-based integrated photonics from near- to mid-infrared applications
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2. A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface;ACS Nano;2023-06-23
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5. Surface Passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer;Crystals;2023-04-12
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