Affiliation:
1. Institute of Semiconductors
2. University of Chinese Academy of Sciences
Abstract
An intermedial annealing treatment is adopted during epitaxial growth of InGaN/GaN multiple quantum well (MQW) by the metal-organic chemical vapor deposition (MOCVD), which is employed after each GaN cap layer growth is finished. Optical power, threshold current and slope efficiency of GaN-based laser diodes is improved through an appropriate intermedial annealing process. A further investigation about the influence of annealing duration on the luminescence characteristics of light-emitting diodes and the surface topography evolution of single quantum well layers is conducted through the study of electroluminescence, temperature dependent photoluminescence and atomic force microscopy. It is found that the improvement of GaN-based laser diode is attributed to reduction of nonradiative recombination centers in MQW, which is due to a better interface quality between well and barrier layers after an intermedial annealing process.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Beijing Nova Program
Strategic Priority Research Program of Chinese Academy of Sciences
Beijing Municipal Science and Technology Commission
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Subject
Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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