Affiliation:
1. Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
3. Institute of Microelectronics of Chinese Academy of Sciences
Abstract
A compact high-power germanium photodetector (Ge PD) is experimentally demonstrated by re-engineering light distribution in the absorber. Compared with a conventional Ge PD, the proposed structure shows a DC saturation photocurrent improved by 28.9% and 3 dB bandwidth as high as 49.5 GHz at 0.1 mA. Under the same photocurrent of 10.5 mA, the proposed Ge PD shows a 3 dB bandwidth of 11.1 GHz, which is almost double the conventional Ge PD (5.6 GHz). The 25 Gb/s eye-diagram measurement verifies the improved power handling capability. The compact size and manufacturing simplicity of this structure will enable new applications for integrated silicon photonics.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
8 articles.
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