Fabrication error tolerant broadband mode converters and their working principles

Abstract

Computational inverse design techniques have shown potential to become reliable means for designing compact nanophotonic devices without compromising the performance. Much effort has been made to reduce the computation cost involved in the optimization process and obtain final designs that are robust to fabrication imperfections. In this work, we experimentally demonstrate TE0-TE1 and TE1-TE3 mode converters (MCs) on the silicon-on-insulator platform designed using the computationally efficient shape optimization method. These MCs have mode conversion efficiencies above 95%, and the insertion loss ranges from 0.3 dB to 1 dB over a wavelength span of 80 nm ranging from 1.5 µm to 1.58 µm. Maximum modal crosstalk found experimentally in the C-band is -19 dB. The conversion efficiency drops at most by 2.2% at 1.55 µm for 10 nm over/under etch, implying good robustness to dimensional variations. We present the mode conversion mechanism of these MCs by studying the simulated electromagnetic field patterns and validate with supportive data. We also demonstrate their performance in the time domain with a 28 Gbps OOK and a 20 GBaud PAM-4 payload transmissions, which supports their utility for high throughput data communications. The open eye diagrams exhibit Q-factors of 8 dB.