Hong–Ou–Mandel interference linking independent room-temperature quantum memories

Author:

Zhang Chao-Ni1,Li Hang1,Dou Jian-Peng1,Lu Feng1,Yang Hong-Zhe1,Pang Xiao-Ling1,Jin Xian-Min12ORCID

Affiliation:

1. University of Science and Technology of China

2. TuringQ Co., Ltd.

Abstract

To realize a large-scale quantum network, both quantum memory and the interference of retrieved indistinguishable photons are essentially required to perform multi-photon synchronization and quantum-interference-mediated entanglement swapping. Significant progress has been achieved in low-temperature and well-isolated systems. However, linking independent quantum memories at room temperature remain challenging. Here, we present an experimental demonstration of Hong–Ou–Mandel interference between single photons from two independent room-temperature quantum memories. We manage to simultaneously operate two such quantum memories and individually obtain a memory-built-in quantum correlation of Stokes and anti-Stokes photons by a far-off-resonance Duan–Lukin–Cirac–Zoller protocol. We also successfully enhance the Hong–Ou–Mandel interference rate up to about 15 times by increasing each photon rate, which is achieved by coordinating two quantum memories with a repeat-until-success fashion. We observe the visibility of quantum interference up to 75.0% without reduction of any background noise, well exceeding the classical limit of 50%. Our results, together with its straightforward, broadband, and room-temperature features, open up a promising way towards realizing large-scale quantum networks at ambient conditions.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Shanghai Municipal Education Commission

China Postdoctoral Science Foundation

Shanghai Talent Program

Zhiyuan Innovative Research Center of Shanghai Jiao Tong University

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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