Abstract
In this paper, a fabrication friendly terahertz (THz) metamaterial hybrid absorber comprised of square-shaped graphene and U-shaped vanadium dioxide is proposed and numerically analyzed. This device can be tuned dynamically to function as a wide-broadband, reduced-broadband, multi-band, or perfect single-band absorber. Switchable qualities are achieved through simultaneous tuning of the electrical properties of graphene and the phase transition properties of vanadium dioxide. The theory behind the absorption is explored using the distribution of the electric field and the theory of impedance matching. It is clear from the simulation results that the suggested structure can perform as a wide-broadband absorber for the transverse electric (TE) wave during the insulating phase of vanadium dioxide. In this case, graphene’s Fermi energy is configured to 0.7 eV, and it has a 0.1 ps relaxation time. Moreover, only changing the relaxation time to 0.5 ps enables the identical structure to perform as a multi-band absorber. On the contrary, the designed structure exhibits a reduced broadband absorption for the TE wave when the vanadium dioxide is thermally tuned to a metallic state and graphene’s Fermi energy is configured to 0 eV with a 0.1 ps relaxation time. Moreover, by inducing the metallic state in vanadium dioxide and adjusting the Fermi energy of graphene to 0.3 eV with a 0.1 ps relaxation time, the structure performs as a single-band perfect absorber. The main advantage of this work is that the proposed absorber device can be operated as a single-band, multi-band, or broadband absorber with two different bandwidths by applying external voltage and changing temperature. Additionally, for both the TE and transverse magnetic (TM) waves, the structure retains a high level of absorption until 40° of incident angle. Finally, due to its multi-functional property, simple geometric structure, and actively adjustable function, the presented structure has possible real-life applications in the terahertz frequency range.
Funder
Department of EEE and financial contribution of the Office of R&E
Rajshahi University of Engineering & Technology