Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Cited by 516 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Direct bandgap emission from strain-doped germanium;Nature Communications;2024-01-19
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3. Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method;ACS Omega;2023-12-12
4. Electric field effect on the intersubband optical absorption of GeSn quantum wells with parabolically graded barriers;Micro and Nanostructures;2023-12
5. Self‐Rolled‐Up Ultrathin Single‐Crystalline Silicon Nanomembranes for On‐Chip Tubular Polarization Photodetectors;Advanced Materials;2023-11-20
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