Broadband, compact and reflection-less silicon polarizer and polarization beam splitter using chirped anti-symmetric multimode nanobeams

Abstract

We present chirped anti-symmetric multimode nanobeams (CAMNs) based on silicon-on-insulator platforms, and describe their applications as broadband, compact, reflection-less, and fabrication-tolerant TM-pass polarizers and polarization beam splitters (PBSs). The anti-symmetric structural perturbations of a CAMN ensure that only contradirectional coupling between symmetric and anti-symmetric modes is possible, which can be exploited to block the unwanted back reflection of the device. The new possibility of introducing a large chirp on an ultra-short nanobeam-based device to overcome the operation bandwidth limitation due to the coupling coefficient saturation effect is also shown. The simulation results show that an ultra-compact CAMN with a length of ∼4.68 um can be used to develop a TM-pass polarizer or a PBS with an ultra-broad 20 dB extinction ratio (ER) bandwidth of >300 nm and an average insertion loss of <1.3 dB. The CAMN-based polarizer and PBS were fabricated and experimentally characterized in a wavelength range from 1507 to 1575 nm. The measured ERs were >20 dB over the entire tested wavelength range and the average insertion losses were <0.5 dB for both devices. The mean reflection suppression ratio of the polarizer was ∼26.4 dB. Large fabrication tolerances of ±60 nm in the waveguide widths of the devices were also demonstrated.