Preparation and photoelectric properties of F-doped cuprous oxide thin films-Reference-Cited by-同舟云学术

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Preparation and photoelectric properties of F-doped cuprous oxide thin films

Published:2021-01 Issue: Volume:111 Page:110167
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Wu Yong-bin,Li Yan,Zhao Ying-jie,Zhou Wei,Zhong Fu-xin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference40 articles.

1. Electrodeposition of Cu2O: growth, properties, and applications;Brandt;J. Solid State Electrochem.,2017

2. Synthesis and characterization of Cu2O nanowires array via an anodic oxidation method;Lv;Mater. Lett.,2018

3. Effect of grain boundary cross-section on the performance of electrodeposited Cu2O photocathodes;Das;J. Phys. Chem. C,2018

4. A study of electrodeposited cuprous oxide photovoltaic cells;Briskman;Sol. Energy Mater. Sol. Cell.,1992

5. Reusable copper-catalyzed cross-coupling reactions of aryl halides with organotins in inexpensive ionic liquids;Li;J. Org. Chem.,2006

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling optical energy gap of thin film cuprous oxide semiconductor using swarm intelligent computational method;Cogent Engineering;2022-11-01

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