Conductivity enhancement and semiconductor–metal transition in Ti-doped ZnO films-Reference-Cited by-同舟云学术

Conductivity enhancement and semiconductor–metal transition in Ti-doped ZnO films

Published:2007-07 Issue:11 Volume:29 Page:1548-1552
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Lu J.J.,Lu Y.M.,Tasi S.I.,Hsiung T.L.,Wang H.P.,Jang L.Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference26 articles.

1. Effects of substrate temperature on the properties of heavily Al-doped ZnO films by simultaneous r.f. and d.c. magnetron sputtering

2. Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms

3. Properties of ZnO:In film prepared by sputtering of facing ZnO:In and Zn targets

4. Magnetoresistance of 3d transition-metal-doped epitaxial ZnO thin films

5. Improving the conductance of ZnO thin films by doping with Ti

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