Optical properties of the low-energy Ge-implanted and annealed SiO2 films-Reference-Cited by-同舟云学术

Optical properties of the low-energy Ge-implanted and annealed SiO2 films

Published:2015-08 Issue: Volume:46 Page:491-496
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

He Peng,Wang Chong,Li Chen,Yang Jie,Qiu Feng,Wang Rongfei,Yang Yu

Funder

the National Science Foundation of China

Open Project of National Laboratory for Infrared Physics

Applied Basic Research Project of Yunnan Province of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

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1. Effective enhancement of the photoluminescence from the Si⁺/Ni⁺ ions co-implanted SOI by directly constructing the nanodisk photonic crystals;J INFRARED MILLIM W;2021

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3. Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation;Coatings;2020-12-27

4. Simultaneous microbeam IBA and beam-induced luminescence analysis of strained doped silica fibre radiation dosimeters;Radiation Physics and Chemistry;2019-02

5. Light emitting properties of Si+ self-ion implanted silicon-on-insulator from visible to infrared band;Optics Express;2018-06-08