Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals-Reference-Cited by-同舟云学术

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Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals

Published:2013-01 Issue:3 Volume:35 Page:414-418
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Isik M.,Guler I.,Gasanly N.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference22 articles.

1. Synthesis and structural properties of CuInGeS4

2. Phase diagram of the quasi-binary system TlInSe2–SnSe2

3. Fabrication and characterization of the lamellar ternary compounds GaxIn1−xSe

4. Photoluminescence of layered Ga1-xInxSe crystals at two-photon optical excitation

5. The nature of energy bands of AIIIBVI layered crystals near the absorption edge

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals;Physica B: Condensed Matter;2013-07

2. Optimal doping of GaSe with isovalent elements;SPIE Proceedings;2013-05-08

3. Infrared and Raman scattering spectra of layered structured Ga3InSe4 crystals;Physica B: Condensed Matter;2013-03

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