Interface passivation and band alignment of high efficiency Cu(In, Ga)Se2 solar cells: Application of Mo(OxSe1-x)2 buffer layer at Mo/ Cu(In, Ga)Se2 interface

Author:

Sun Leiyi,Wang Hui,Wang Ruihu,Peng ZhuoORCID,Zhou Baozeng,Yuan Yujie,Yao Liyong,Bi JinlianORCID,Xing Yupeng,Li Wei

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference37 articles.

1. Advanced alkali treatments for high‐efficiency Cu (In, Ga) Se2 solar cells on flexible substrates;Romain;Adv. Energy Mater.,2019

2. Potassium-induced surface modification of Cu (In, Ga) Se2 thin films for high-efficiency solar cells;Chirilă;Nat. Mater,2013

3. Compositional investigation of potassium doped Cu (In, Ga) Se2 solar cells with efficiencies up to 20.8;Jackson;Phys. Status Solidi Papid Res. Lett.,2014

4. Cd-free Cu (In, Ga)(Se, S) 2 thin-film solar cell with record efficiency of 23.35;Nakamura;IEEE J. Photovoltaics,2019

5. Highly Improvement in Efficiency of Cu (In, Ga) Se2 Thin Film Solar Cells;Sajadnia,2020

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