The effects of doping and temperature on properties of electrochemically deposited Er3+ doped ZnSe thin films

Author:

Obitte B.C.N.,Ikhioya I.L.ORCID,Whyte G.M.,Chime U.K.,Ezekoye B.A.,Ekwealor A.B.C.,Maaza M.,Ezema Fabian I.ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference46 articles.

1. Effect of deposition time on optical and luminescence properties of ZnS thin films prepared by photo assisted chemical deposition technique;Dhanya;Mater. Sci. Semicond. Process.,2013

2. Amorphous to crystalline phase transformation and band gap refinement in ZnSe thin films;Imran;Thin Solid Films,2018

3. Electrochemical deposition of n-type ZnSe thin film buffer layer for solar cells;Prabukanthan;J. Electrochem. Soc.,2014

4. Effect of thickness on characteristics of ZnSe thin film synthesized by vacuum thermal evaporation;Sayeed;J. Theor. Appl. Phys.,2020

5. Effect of thermal annealing on the band GAP and optical properties of chemical bath deposited ZnSe thin films;Ezema;Turk. J. Phys.,2006

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