Stability and electronic properties of O vacancies and Ce4+ in Lu2SiO5 tuned by C doping-Reference-Cited by-同舟云学术

Stability and electronic properties of O vacancies and Ce4+ in Lu2SiO5 tuned by C doping

Published:2019-07 Issue: Volume:93 Page:15-18
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Jia Lingchun,Gu Mu,Song Ge,Zhu Jiajie

Funder

National Natural Science Foundation of China

Science and Technology Foundation of Shenzhen

Doctoral Scientific Research Foundation of Shanghai Ocean University

Opening Project of Shanghai Key Laboratory of Special Artificial Microstructure Materials and Techonology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference22 articles.

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2. Cerium-doped lutetium oxyorthosilicate: A fast, efficient new scintillator;Melcher;IEEE Trans. Nucl. Sci.,1992

3. Experimental efforts and results in finding new heavy scintillators;Derenzo,1992

4. EPR study of Ce3+ ions in lutetium silicate scintillators Lu2Si2O7 and Lu2SiO5;Pidol;J. Phys. Chem. Solids,2006

5. Luminescence characteristics of Lu2SiO5:Ce3+ (LSO:Ce) ceramic scintillators under VUV-UV excitation;Fan;Nucl. Instrum. Methods Phys. Res. A,2016

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