Fabrication of UV photodetector based on GaN/ Psi heterojunction using pulse laser deposition method: Effect of different laser wavelengths

Author:

Fakhri Makram A.ORCID,AbdulRazzaq Mohammed Jalal,Jabbar Haneen D.,Salim Evan T.,Alsultany Forat H.,Hashim U.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference84 articles.

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2. Gallium nitride (GaN) nanostructures and their gas sensing properties: a review;Khan;Sensors,2020

3. Optical investigations of GaN deposited nano films using pulsed laser ablation in ethanol;Abdul Amir;International Journal of Nanoelectronics and Materials,2022

4. Gallium Nitride (GaN) : Physics, Devices, and Technology;Medjdoub,2015

5. Gallium Nitride-Based Electronic and Optoelectronic Devices;Wang,2015

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