Temperature dependent operation of 1.5 μm GaInAsP/InP VCSELs-Reference-Cited by-同舟云学术

Temperature dependent operation of 1.5 μm GaInAsP/InP VCSELs

Published:2002-08 Issue:2-3 Volume:32 Page:103-116
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hepburn C.J.,Sceats R.,Ramoo D.,Boland-Thoms A.,Balkan N.,Adams M.J.,Dann A.J.,Perrin S.D.,Reid I.,Reed J.,Cannard P.,Fisher M.A.,Elton D.J.,Harlow M.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

2. Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers

3. GaAs to InP wafer fusion

4. 1.55 [micro sign]m vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBRs

5. 1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

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