Structural and electronic properties of zinc blende BxGa1−xN nitrides
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference30 articles.
1. See, e.g.: J.H. Edgar, Properties of Group III Nitrides, EMIS Data Reviews Series, London, 1994.
2. Thin films and devices of diamond, silicon carbide and gallium nitride
3. X-ray spectra and electronic structure of aluminum in AlN and B x Al1 − x N crystals with a wurtzite structure
4. Electronic energy structure and X-ray spectra of GaN and BxGa1-x N crystals
5. EELS investigation of the electron conduction-band states in wurtzite AlN and oxygen-doped AlN(O)
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