Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films-Reference-Cited by-同舟云学术

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Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films

Published:2009-10 Issue:10 Volume:11 Page:1833-1837
ISSN:1293-2558
Container-title:Solid State Sciences
language:en
Short-container-title:Solid State Sciences

Author:

Vasin A.V.,Ishikawa Y.,Kolesnik S.P.,Konchits A.A.,Lysenko V.S.,Nazarov A.N.,Rudko G.Yu.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference18 articles.

1. Photoluminescence Spectra of Carbon Clusters Embedded in SiO2

2. Visible Photoluminescence in Carbon-Implanted Thermal SiO2 Films

3. Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions

4. Different luminescent properties of C+-implanted SiO2 films grown by thermal oxidation and PECVD

5. Intense blue–white luminescence from carbon-doped silicon-rich silicon oxide

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2. An effect of hydrogenation on the photoemission of amorphous SiCN films;International Journal of Hydrogen Energy;2022-02

3. White light emission of wide‐bandgap silicon carbide: A review;Journal of the American Ceramic Society;2022-01-27

4. Synthesis and Luminescent Properties of Carbon Nanodots Dispersed in Nanostructured Silicas;Nanomaterials;2021-12-01

5. Photoluminescence properties of SiOxCy-films deposited under argon atmosphere and Si-based organometallic precursor by O-Cat-CVD;2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2021-11-10

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