Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

Author:

Elogail Y.ORCID,Kasper E.,Gunzer F.,Shaker A.ORCID,Schulze J.

Funder

German Research Council, DFG

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference26 articles.

1. Development of RF' transistors: a historical prospect;Schwierz,2001

2. Guide to State-of-the-art Electron Devices;Burghartz,2013

3. Laterally-scaled Si/Si0.7 Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias;Koester;Electron Devices Lett.,2005

4. High-fT, n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD;Koester;Electron Devices Lett.,1999

5. Silicon Quantum Integrated Circuits: Silicon-germanium Heterostructure Devices: Basics and Realizations;Kasper,2005

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