Electronic Topological Transitions in CuNiMnAl and CuNiMnSn under pressure from first principles study
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference40 articles.
1. Doping ofMn2VAlandMn2VSiHeusler alloys as a route to half-metallic antiferromagnetism
2. The structural, electronic, magnetic and mechanical properties of quaternary Heusler alloys ZrTiCrZ(Z = Al, Ga, In, Si, Ge, Sn): a first-principles study
3. Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge)
4. Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure
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