Film thickness dependence on the electrical and optical properties of PtSi/p-Si(1 0 0) Schottky barrier detector

Author:

Lyu Yen-Tang,Lee Ching-Ting,Horng Gwo-Ji,Ho Chia,Lee Ching-Yuan,Wu Chung-Sen

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference14 articles.

1. W.F. Kosonoky, SPIE Proceedings, Infrared Detectors and Focal Plane Arrays, Vol. 1308, Orlando, SPIE Press, Washington, DC, 1990, pp. 2–26.

2. D.L. Clark, J.R. Berry, SPIE Proceedings, Infrared Technology XVII, Vol. 1540, San Diego, SPIE Press, Washington, DC, 1991, pp. 303–311.

3. N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, N. Tsubouchi, in: Proceedings of the International Electron Devices Meeting, Detectors, Sensors, and Displays-Charge Coupled Devices and MSM Photodetector, Washington, DC, 1991, pp. 175–178.

4. Crystallography of PtSi films on (001) silicon

5. Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System

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