Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
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1. Structural and Electrical Properties of Ni-Germanosilicides Formed Using Pulsed KrF Laser Annealing;Journal of Computational and Theoretical Nanoscience;2015-05-01
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3. Contact Metallization on Silicon–Ger manium;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13
4. Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi[sub 1−x]Ge[sub x] Films;Electrochemical and Solid-State Letters;2007
5. Overview;Silicon Heterostructure Handbook;2005-11
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