On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference13 articles.
1. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel
2. Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs
3. Performance enhancement in a metal‐insulator‐semiconductor–like pseudomorphic transistor by utilizing an n−‐GaAs/n+‐In0.2Ga0.8As two‐layer structure
4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
5. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors
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