Band-gap engineering of graphene by Al doping and adsorption of Be and Br on impurity: A computational study-Reference-Cited by-同舟云学术

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Band-gap engineering of graphene by Al doping and adsorption of Be and Br on impurity: A computational study

Published:2020-06 Issue: Volume:23 Page:e00463
ISSN:2352-2143
Container-title:Computational Condensed Matter
language:en
Short-container-title:Computational Condensed Matter

Author:

Tayyab Muhammad,Hussain Akhtar,Adil Waqar,Nabi Shafqat,Asif Qurat ul Ain

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Band-gap tuning of graphene by Be doping and Be, B co-doping: a DFT study;Ullah;RSC Adv.,2015

2. Adsorption of formaldehyde molecule on the intrinsic and Al-doped graphene: a first principle study;Chi;Comput. Mater. Sci.,2009

3. Theoretical study of graphene doping mechanism by iodine molecules;Tristant;J. Phys. Chem. C,2015

4. Graphene: carbon in two dimensions;Mikhail;Mater. Today,2007

5. Fine tuning of band-gap of graphene by atomic and molecular doping: a density functional theory study;Hussain;RSC Adv.,2016

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