Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel-Reference-Cited by-同舟云学术

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Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel

Published:2024-05 Issue: Volume:188 Page:111897
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Kim Minsoo,Son Jong Yeog^ORCID

Publisher

Elsevier BV

Reference25 articles.

1. Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET;Nagaraju;J. Phys. D Appl. Phys.,2006

2. Hysteresis in electric polarization of InP doped with Mn;Park;Appl. Phys. Lett.,2006

3. A ferroelectric semiconductor field-effect transistor;Si;Nat. Electron.,2019

4. Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering;Hema Chandra;Adv. Math.,2020

5. Ferromagnetic ordering in nanostructured Mn-doped InP;Poddar;Appl. Phys. Lett.,2005

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1. Investigations on cleavage fracture mechanism and surface damage of indium phosphide by molecular dynamics simulation;Materials Today Communications;2024-08

2. Enhanced visible light photo‐Fenton catalysis by Fe‐doping oligo‐layer natural molybdenite with efficient carrier spatial‐driven Fe³⁺/Fe²⁺ cycle;Photochemistry and Photobiology;2024-04-16

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