Annealing effect on the near-band edge emission of ZnO-Reference-Cited by-同舟云学术

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Annealing effect on the near-band edge emission of ZnO

Published:2013-02 Issue:2 Volume:74 Page:291-297
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Khomyak V.V.,Slyotov M.M.,Shtepliuk I.I.,Lashkarev G.V.,Slyotov O.M.,Marianchuk P.D.,Kosolovskiy V.V.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference56 articles.

1. A comprehensive review of ZnO materials and devices

2. Zinc oxide - analogue of GaN with new perspective possibilities

3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

4. Excitonic ultraviolet lasing in ZnO-based light emitting devices

5. Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition

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1. Exploration of the optical characteristics in sol-gel synthesized europium-doped zinc oxide thin films for potential optoelectronic use: a comprehensive characterization approach;Physica Scripta;2024-05-06

2. Enhancing the Efficiency of Inverted Organic Solar Cells with Treatment Techniques: Numerical and Experimental Study;International Journal of Energy Research;2023-10-14

3. The Gaussian nature of the band-edge of ZnO microcrystalline thin films;AIP Advances;2022-12-01

4. Defect density and performance influenced by ozone treatment of ZnO interface in inverted organic solar cell;Solar Energy;2021-09

5. Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD;Materials;2021-02-22

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