Corrigendum to “Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials” [J. Phys. Chem. Solid. 173 (2023) 111114]
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Published:2023-05
Issue:
Volume:176
Page:111273
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ISSN:0022-3697
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Container-title:Journal of Physics and Chemistry of Solids
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language:en
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Short-container-title:Journal of Physics and Chemistry of Solids
Author:
Yokoi Tatsuya,Kato Hirotaka,Oshima Yu,Matsunaga Katsuyuki
Subject
Condensed Matter Physics,General Materials Science,General Chemistry