Investigations of structure and morphology of the AlN nano-pillar crystal films prepared by halide chemical vapor deposition under atmospheric pressure-Reference-Cited by-同舟云学术

Investigations of structure and morphology of the AlN nano-pillar crystal films prepared by halide chemical vapor deposition under atmospheric pressure

Published:2006-04 Issue:4 Volume:67 Page:665-668
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Takahashi Naoyuki,Matsumoto Yoriko,Nakamura Takato

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference16 articles.

1. Stress, porosity measurements and corrosion behaviour of AlN films deposited on steel substrates

2. Deposition of TiN/AlN bilayers on a rotating substrate by reactive sputtering

3. Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

4. Reactive DC magnetron sputtering of aluminum nitride films for surface acoustic wave devices

5. Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

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